Datasheet DXTP78100CFG (Diodes) - 4

ManufacturerDiodes
DescriptionPNP, 100V, 2.5A in PowerDI3333-8/SWP package
Pages / Page8 / 4 — DXTP78100CFG. Electrical Characteristics. Characteristic. Symbol. Min. …
File Format / SizePDF / 625 Kb
Document LanguageEnglish

DXTP78100CFG. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. Fig 6. Timing Waveform

DXTP78100CFG Electrical Characteristics Characteristic Symbol Min Typ Max Unit Test Condition Fig 6 Timing Waveform

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DXTP78100CFG Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -110 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -100 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA V Collector Cutoff Current CB = -110V ICBO — — 1 µA VCB = -110V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -80V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -90 — mV IC = -100mA, IB = -1mA — -110 -160 mV IC = -1A, IB = -50mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -70 -85 mV IC = -1A, IB = -100mA — -90 -125 mV IC = -1.5A, IB = -150mA — -165 -300 mV IC = -2.5A, IB = -250mA — -860 -950 mV IC = -1.5A, IB = -150mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -930 -1,050 mV IC = -2.5A, IB = -250mA — -750 -850 mV IC = -1.5A, VCE = -2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — -815 -900 mV IC = -2.5A, VCE = -2V 200 350 — — IC = -10mA, VCE = -2V 250 340 420 — IC = -100mA, VCE = -2V 220 300 — — IC = -0.5A, VCE = -2V DC Current Gain (Note 10) hFE 160 260 — — IC = -1A, VCE = -2V 60 130 — — IC = -1.5A, VCE = -2V 15 35 — — IC = -2.5A, VCE = -2V Input Capacitance Cibo — 300 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 21 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 150 290 — MHz VCE = -10V, IC = -100mA f = 50MHz td — 13.5 — ns Turn-On Time tr — 90 — ns VCC = -10V, IC = -1.5A ts — 255 — ns IB1 = -IB2 = -150mA Turn-Off Time tf — 48 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTP78100CFG 4 of 8 August 2025 Document number: DS46858 Rev. 2 - 2
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