Datasheet DXTP80060DFGQ (Diodes) - 4

DXTP80060DFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -70 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -60 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA V Collector Cutoff Current CB = -60V ICBO — — -10 µA VCB = -60V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -48V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -55 — mV IC = -100mA, IB = -1mA — -90 -140 mV IC = -1A, IB = -20mA — -35 -50 mV I Collector-Emitter Saturation Voltage (Note 10) C = -1A, IB = -100mA VCE(sat) — -140 -190 mV IC = -3.5A, IB = -175mA — -290 -550 mV IC = -5A, IB = -250mA — -170 -250 mV IC = -6A, IB = -600mA — -870 -1,000 mV IC = -3.5A, IB = -175mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -980 -1,100 mV IC = -6A, IB = -600mA — -750 -850 mV I Base-Emitter Turn-On Voltage (Note 10) C = -3.5A, VCE = -2V VBE(on) — -810 -900 mV IC = -6A, VCE = -2V 250 355 — — IC = -10mA, VCE = -2V 300 350 550 — IC = -100mA, VCE = -2V 260 315 — — IC = -1A, VCE = -2V DC Current Gain (Note 10) hFE 230 290 — — IC = -2A, VCE = -2V 190 235 — — IC = -3.5A, VCE = -2V 35 70 — — IC = -6A, VCE = -2V Input Capacitance Cibo — 555 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 40 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 100 180 — MHz VCE = -10V, IC = -100mA f = 50MHz td — 13.5 — ns Turn-On Time tr — 65 — ns VCC = -10V, IC = -3.5A ts — 205 — ns IB1 = -IB2 = -350mA Turn-Off Time tf — 19 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTP80060DFGQ 4 of 8 August 2025 Document number: DS46955 Rev. 2 - 2
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