Datasheet 2N4921G, 2N4922G, 2N4923G (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | 1.0 Ampere General Purpose Power Transistors 40−80 Volts, 30 Watts |
| Pages / Page | 7 / 1 — DATA SHEET. www.onsemi.com. 1.0 AMPERE. GENERAL PURPOSE. POWER … |
| File Format / Size | PDF / 232 Kb |
| Document Language | English |
DATA SHEET. www.onsemi.com. 1.0 AMPERE. GENERAL PURPOSE. POWER TRANSISTORS. 40−80 VOLTS, 30 WATTS. Features. MAXIMUM RATINGS. TO−225
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DATA SHEET www.onsemi.com
Medium-Power Plastic
1.0 AMPERE
NPN Silicon Transistors
GENERAL PURPOSE POWER TRANSISTORS
2N4921G, 2N4922G,
40−80 VOLTS, 30 WATTS
2N4923G COLLECTOR These high−performance plastic devices are designed for driver 2, 4 circuits, switching, and amplifier applications.
Features
3 • Low Saturation Voltage BASE • Excellent Power Dissipation 1 • Excellent Safe Operating Area EMITTER • Complement to PNP 2N4920G • These Devices are Pb−Free and are RoHS Compliant**
MAXIMUM RATINGS TO−225 Rating Symbol Value Unit CASE 77−09 STYLE 1
Collector−Emitter Voltage VCEO Vdc 2N4921G 40 2N4922G 60 1 2 3 2N4923G 80 Collector−Emitter Voltage VCB Vdc
MARKING DIAGRAM
2N4921G 40 2N4922G 60 2N4923G 80 Emitter Base Voltage V YWW EB 5.0 Vdc 2 Collector Current − Continuous (Note 2) IC 1.0 Adc N492xG Collector Current − Peak (Note 2) ICM 3.0 Adc Base Current − Continuous IB 1.0 Adc Y = Year Total Power Dissipation P WW = Work Week D @ TC = 25_C 30 W 2N492x = Device Code Derate above 25_C 0.24 mW/_C x = 1, 2, or 3 Operating and Storage Junction T G = Pb−Free Package J, Tstg –65 to +150 _C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be
Device Package Shipping
assumed, damage may occur and reliability may be affected. 2. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. 2N4922G TO−225 500 Units / Box The 3.0 A maximum value is based upon actual current handling capability of (Pb−Free) the device (see Figures 5 and 6). 2N4923G TO−225 500 Units / Box
THERMAL CHARACTERISTICS
(Pb−Free) (Note 3)
Characteristic Symbol Max Unit DISCONTINUED
(Note 1) Thermal Resistance, Junction−to−Case R 2N4921G TO−225 500 Units / Box qJC 4.16 _C/W (Pb−Free) 3. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. 1.
DISCONTINUED:
This device is not recommended for new design. Please contact your
onsemi
representative for information. The most current information on this device may be available on www.onsemi.com. *For additional information on our Pb−Free strategy and soldering details, please download the
onsemi
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2024 − Rev. 16 2N4921/D
DATA SHEET www.onsemi.com
Medium-Power Plastic
1.0 AMPERE
NPN Silicon Transistors
GENERAL PURPOSE POWER TRANSISTORS
2N4921G, 2N4922G,
40−80 VOLTS, 30 WATTS
2N4923G COLLECTOR These high−performance plastic devices are designed for driver 2, 4 circuits, switching, and amplifier applications.
Features
3 • Low Saturation Voltage BASE • Excellent Power Dissipation 1 • Excellent Safe Operating Area EMITTER • Complement to PNP 2N4920G • These Devices are Pb−Free and are RoHS Compliant**
MAXIMUM RATINGS TO−225 Rating Symbol Value Unit CASE 77−09 STYLE 1
Collector−Emitter Voltage VCEO Vdc 2N4921G 40 2N4922G 60 1 2 3 2N4923G 80 Collector−Emitter Voltage VCB Vdc
MARKING DIAGRAM
2N4921G 40 2N4922G 60 2N4923G 80 Emitter Base Voltage V YWW EB 5.0 Vdc 2 Collector Current − Continuous (Note 2) IC 1.0 Adc N492xG Collector Current − Peak (Note 2) ICM 3.0 Adc Base Current − Continuous IB 1.0 Adc Y = Year Total Power Dissipation P WW = Work Week D @ TC = 25_C 30 W 2N492x = Device Code Derate above 25_C 0.24 mW/_C x = 1, 2, or 3 Operating and Storage Junction T G = Pb−Free Package J, Tstg –65 to +150 _C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the
ORDERING INFORMATION
device. If any of these limits are exceeded, device functionality should not be
Device Package Shipping
assumed, damage may occur and reliability may be affected. 2. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. 2N4922G TO−225 500 Units / Box The 3.0 A maximum value is based upon actual current handling capability of (Pb−Free) the device (see Figures 5 and 6). 2N4923G TO−225 500 Units / Box
THERMAL CHARACTERISTICS
(Pb−Free) (Note 3)
Characteristic Symbol Max Unit DISCONTINUED
(Note 1) Thermal Resistance, Junction−to−Case R 2N4921G TO−225 500 Units / Box qJC 4.16 _C/W (Pb−Free) 3. Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. 1.
DISCONTINUED:
This device is not recommended for new design. Please contact your
onsemi
representative for information. The most current information on this device may be available on www.onsemi.com. *For additional information on our Pb−Free strategy and soldering details, please download the
onsemi
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2024 − Rev. 16 2N4921/D