Datasheet ZTX300 (Diodes) - 2
| Manufacturer | Diodes |
| Description | NPN Silicon Planar Small Signal Transistor in E-Line package |
| Pages / Page | 2 / 2 — TYPICAL CHARACTERISTICS. VBE(sat) v IC. VCE(sat) v IC. VBE. BE s. ( at. a … |
| File Format / Size | PDF / 49 Kb |
| Document Language | English |
TYPICAL CHARACTERISTICS. VBE(sat) v IC. VCE(sat) v IC. VBE. BE s. ( at. a ) v A. A b. m i. b en. e t. t Te. T m. e p. m er. e a. r ture. ture
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Text Version of Document
NPN SILICON PLANAR ZTX300 SMALL SIGNAL TRANSISTOR ZTX300 ISSUE 2 MARCH 94
TYPICAL CHARACTERISTICS
0.95 0.25 IC/IB=30 0.90 0.20 IC/IB=10 C olts) olts) B 0.85 0.15 IC/IB=30 IC/IB=10 E - (V - (V ) )t at s 0.80 a 0.10 E-Line ( (s E BE C TO92 Compatible V V 0.75 0.05 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 0.70 0 10 20 30 40 50 60 10 20 30 40 50 60 Collector-Base Voltage VCBO 25 V IC - Collector Current (mA) IC - Collector Current (mA) Collector-Emitter Voltage VCEO 25 V
VBE(sat) v IC VCE(sat) v IC
Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 500 mA 1.0 Power Dissipation at T V amb=25°C Ptot 300 mW CE=6V IC=50mA IB=5mA Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C 0.9 200 FE ELECTRICAL CHARACTERISTICS (at T olts) 0.8 150 amb = 25°C unless otherwise stated). V I ( C=50mA - IC=10mA IC=10mA PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. IB=1mA at) 0.7 (s 100 E Collector-Base V(BR)CBO 25 V IC=10µA, IE=0 B Breakdown Voltage V IC=100µA 0.6 % Change of h 50 Collector-Emitter VCEO(sus) 25 V IC=5mA, IB=0 Sustaining Voltage 0.5 0 -100 -50 5 0 50 100 150 15 -100 -50 0 50 100 150 Emitter-Base V(BR)EBO 5 V IE=10µA, IC=0 Ambient T emperature (°C) Ambient T Ambient Temperature (°C) Breakdown Voltage
VBE V ( BE s ( at a ) v A v m A b m i b en e t n t Te T m e p m er e a r ture a ture hFE v Ambient Temperature
Collector Cut-Off ICBO 0.2 µA VCB=25V, IE=0 Current Emitter Cut-Off Current IEBO 0.2 µA VEB=4V, IC=0 0.20 -55°C Collector-Emitter V +25°C CE(sat) 0.35 V IC=50mA, IB=5mA* 150 +100°C Saturation Voltage E F 0.18 h f Base-Emitter VBE(sat) 0.65 1.0 V IC=10mA, IB=1mA* Saturation Voltage e o 100 g 0.16 olts) IC=50mA IB=5mA (V Static Forward Current hFE 50 300 IC=10mA, VCE=6V* - Transfer Ratio 0.14 at) 50 % Chan (s E Transition f C T 150 MHz IC=10mA, VCE=6V V 0.12 Frequency f=100MHz Output Capacitance C 0 obo 6 pF VCB=6V, IE=0 0.1 1 10 100 1000 0.10 f=1MHz -100 -50 0 50 100 150 IC - Collector Current (mA) Ambient Temperature (°C) Noise Figure N 7 dB VCE=6V, f=1KHz RS=1500Ω, IC=100µA
hFE v IC VCE(sat) v Ambient Temperature
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-157 3-156
TYPICAL CHARACTERISTICS
0.95 0.25 IC/IB=30 0.90 0.20 IC/IB=10 C olts) olts) B 0.85 0.15 IC/IB=30 IC/IB=10 E - (V - (V ) )t at s 0.80 a 0.10 E-Line ( (s E BE C TO92 Compatible V V 0.75 0.05 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 0.70 0 10 20 30 40 50 60 10 20 30 40 50 60 Collector-Base Voltage VCBO 25 V IC - Collector Current (mA) IC - Collector Current (mA) Collector-Emitter Voltage VCEO 25 V
VBE(sat) v IC VCE(sat) v IC
Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 500 mA 1.0 Power Dissipation at T V amb=25°C Ptot 300 mW CE=6V IC=50mA IB=5mA Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C 0.9 200 FE ELECTRICAL CHARACTERISTICS (at T olts) 0.8 150 amb = 25°C unless otherwise stated). V I ( C=50mA - IC=10mA IC=10mA PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. IB=1mA at) 0.7 (s 100 E Collector-Base V(BR)CBO 25 V IC=10µA, IE=0 B Breakdown Voltage V IC=100µA 0.6 % Change of h 50 Collector-Emitter VCEO(sus) 25 V IC=5mA, IB=0 Sustaining Voltage 0.5 0 -100 -50 5 0 50 100 150 15 -100 -50 0 50 100 150 Emitter-Base V(BR)EBO 5 V IE=10µA, IC=0 Ambient T emperature (°C) Ambient T Ambient Temperature (°C) Breakdown Voltage
VBE V ( BE s ( at a ) v A v m A b m i b en e t n t Te T m e p m er e a r ture a ture hFE v Ambient Temperature
Collector Cut-Off ICBO 0.2 µA VCB=25V, IE=0 Current Emitter Cut-Off Current IEBO 0.2 µA VEB=4V, IC=0 0.20 -55°C Collector-Emitter V +25°C CE(sat) 0.35 V IC=50mA, IB=5mA* 150 +100°C Saturation Voltage E F 0.18 h f Base-Emitter VBE(sat) 0.65 1.0 V IC=10mA, IB=1mA* Saturation Voltage e o 100 g 0.16 olts) IC=50mA IB=5mA (V Static Forward Current hFE 50 300 IC=10mA, VCE=6V* - Transfer Ratio 0.14 at) 50 % Chan (s E Transition f C T 150 MHz IC=10mA, VCE=6V V 0.12 Frequency f=100MHz Output Capacitance C 0 obo 6 pF VCB=6V, IE=0 0.1 1 10 100 1000 0.10 f=1MHz -100 -50 0 50 100 150 IC - Collector Current (mA) Ambient Temperature (°C) Noise Figure N 7 dB VCE=6V, f=1KHz RS=1500Ω, IC=100µA
hFE v IC VCE(sat) v Ambient Temperature
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-157 3-156