2N6167-2N6170 High-reliability discrete products SILICON CONTROLLED RECTIFIER and engineering services since 1977FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGSRatingSymbolValueUnitPeak forward and reverse blocking voltage (1) (TJ = -40 to 100°C) 2N6167 VDRM 100 Volts 2N6168 VRRM 200 2N6169 400 2N6170 600 Peak non-repetitive reverse blocking voltage (t ≤ 5ms) 2N6167 150 V Volts 2N6168 RSM 250 2N6169 450 2N6170 650 Average forward current (TC = -40 to +65°C) IT(AV) 13 Amps (85°C) 6.5 Peak surge current (1 cycle, 60Hz, TC = 65°C) I Amps (1.5ms pulse @ T TSM 240 J = 100°C) 560 Preceded and fol owed by no current or voltage Circuit fusing (TJ = -40 to +100°C, t = 8.3ms) I2t 235 A2s Peak gate power PGM 5 Watts Average gate power PG(AV) 0.5 Watts Forward peak gate current IGM 2 Amps Operating junction temperature range TJ -40 to 100 °C Storage temperature range Tstg -40 to 150 °C Stud torque 30 In. lb. Thermal resistance, junction to case RӨJC 1.5 °C/W Note 1: Ratings apply for zero or negative gate voltage. Devices shal not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Rev. 20150306