Datasheet 2N1772A (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | 7.4A,100V Through-Hole SCR in TO-64 package |
| Pages / Page | 9 / 1 — 2N1772A. 2N1774A. 2N1776A. www.centra lsemi.com. 2N1777A. DESCRIPTION:. … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
2N1772A. 2N1774A. 2N1776A. www.centra lsemi.com. 2N1777A. DESCRIPTION:. SILICON CONTROLLED RECTIFIER. 7.4 AMP, 100 THRU 400 VOLT
Model Line for this Datasheet
Text Version of Document
2N1772A 2N1774A 2N1776A www.centra lsemi.com 2N1777A DESCRIPTION: SILICON CONTROLLED RECTIFIER 7.4 AMP, 100 THRU 400 VOLT
The CENTRAL SEMICONDUCTOR 2N1772A series devices are reverse blocking triode thyristors designed for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load currents up to 7.4 amps.
MARKING: FULL PART NUMBER TO-64 CASE MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL 2N1772A 2N1774A 2N1776A 2N1777A UNITS
Peak Repetitive Off-State Voltage VDRM 100 200 300 400 V Peak Repetitive Reverse Voltage VRRM 100 200 300 400 V Peak Non-Repetitive Reverse Voltage VRSM 150 300 400 500 V Peak Reverse Gate Voltage VRGM 10 V RMS On-State Current IT(RMS) 7.4 A Average On-State Current (TC=105°C) IO 4.7 A Peak Forward Gate Current IFGM 2.0 A Peak One Cycle Surge Current (60Hz) ITSM 60 A I2t Value for Fusing, tp=8.3ms I2t 15 A2s Critical Rate of Rise of On-State Current di/dt 60 A/μs Peak Gate Power Dissipation PGM 5.0 W Average Gate Power Dissipation PG(AV) 0.5 W Operating Junction Temperature TJ –65 to +125 °C Storage Temperature Tstg –65 to +150 °C Thermal Resistance JC 3.1 °C/W Mounting Torque - 15 in-lb Mounting Torque (metric) - 17.5 kg-cm
ELECTRICAL CHARACTERISTICS:
(TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM VDRM=100V, TJ=125°C 9.0 mA IRRM VRRM=100V, TJ=125°C 9.0 mA IDRM VDRM=200V, TJ=125°C 6.0 mA IRRM VRRM=200V, TJ=125°C 6.0 mA IDRM VDRM=300V, TJ=125°C 4.0 mA IRRM VRRM=300V, TJ=125°C 4.0 mA IDRM VDRM=400V, TJ=125°C 2.0 mA IRRM VRRM=400V, TJ=125°C 2.0 mA IGT VD=12V, RL=250Ω 15 mA IGT VD=12V, RL=250Ω, TJ=-65°C 30 mA VGT VD=12V, RL=250Ω, TJ=150°C 2.0 V VGD VD=100V, RL=250Ω, TJ=150°C 0.2 V VTM IT=15A 1.85 V IH VD=24V, RL=20Ω, TJ=25°C 25 mA dv/dt - 20 V/μs R3 (20-March 2019)
The CENTRAL SEMICONDUCTOR 2N1772A series devices are reverse blocking triode thyristors designed for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load currents up to 7.4 amps.
MARKING: FULL PART NUMBER TO-64 CASE MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL 2N1772A 2N1774A 2N1776A 2N1777A UNITS
Peak Repetitive Off-State Voltage VDRM 100 200 300 400 V Peak Repetitive Reverse Voltage VRRM 100 200 300 400 V Peak Non-Repetitive Reverse Voltage VRSM 150 300 400 500 V Peak Reverse Gate Voltage VRGM 10 V RMS On-State Current IT(RMS) 7.4 A Average On-State Current (TC=105°C) IO 4.7 A Peak Forward Gate Current IFGM 2.0 A Peak One Cycle Surge Current (60Hz) ITSM 60 A I2t Value for Fusing, tp=8.3ms I2t 15 A2s Critical Rate of Rise of On-State Current di/dt 60 A/μs Peak Gate Power Dissipation PGM 5.0 W Average Gate Power Dissipation PG(AV) 0.5 W Operating Junction Temperature TJ –65 to +125 °C Storage Temperature Tstg –65 to +150 °C Thermal Resistance JC 3.1 °C/W Mounting Torque - 15 in-lb Mounting Torque (metric) - 17.5 kg-cm
ELECTRICAL CHARACTERISTICS:
(TJ=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM VDRM=100V, TJ=125°C 9.0 mA IRRM VRRM=100V, TJ=125°C 9.0 mA IDRM VDRM=200V, TJ=125°C 6.0 mA IRRM VRRM=200V, TJ=125°C 6.0 mA IDRM VDRM=300V, TJ=125°C 4.0 mA IRRM VRRM=300V, TJ=125°C 4.0 mA IDRM VDRM=400V, TJ=125°C 2.0 mA IRRM VRRM=400V, TJ=125°C 2.0 mA IGT VD=12V, RL=250Ω 15 mA IGT VD=12V, RL=250Ω, TJ=-65°C 30 mA VGT VD=12V, RL=250Ω, TJ=150°C 2.0 V VGD VD=100V, RL=250Ω, TJ=150°C 0.2 V VTM IT=15A 1.85 V IH VD=24V, RL=20Ω, TJ=25°C 25 mA dv/dt - 20 V/μs R3 (20-March 2019)