Datasheet ZXM61P03F (Diodes) - 2

ManufacturerDiodes
Description30V P-Channel Enhancement Mode MOSFET in SOT23 package
Pages / Page7 / 2 — ZXM61P03F. ABSOLUTE MAXIMUM RATINGS. PARAMETER. SYMBOL. LIMIT. UNIT. …
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Document LanguageEnglish

ZXM61P03F. ABSOLUTE MAXIMUM RATINGS. PARAMETER. SYMBOL. LIMIT. UNIT. THERMAL RESISTANCE. VALUE. NOTES:. ISSUE 1 - OCTOBER 2005

ZXM61P03F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT THERMAL RESISTANCE VALUE NOTES: ISSUE 1 - OCTOBER 2005

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ZXM61P03F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V Gate- Source Voltage VGS ⫾20 V Continuous Drain Current (VGS=-10V; TA=25°C)(b) ID -1.1 A (VGS=-10V; TA=70°C)(b) -0.9 Pulsed Drain Current (c) IDM -4.3 A Continuous Source Current (Body Diode)(b) IS -0.88 A Pulsed Source Current (Body Diode)(c) ISM -4.3 A Power Dissipation at TA=25°C (a) PD 625 mW Linear Derating Factor 5 mW/°C Power Dissipation at TA=25°C (b) PD 806 mW Linear Derating Factor 6.4 mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 200 °C/W Junction to Ambient (b) RθJA 155 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005 S E M I C O N D U C T O R S 2