Datasheet 2SD669 (Unisonic Technologies) - 5
| Manufacturer | Unisonic Technologies |
| Description | Bipolar Power General Purpose Transistor |
| Pages / Page | 7 / 5 — 2SD669/A. NPN SILICON TRANSISTOR. ELECTRICAL CHARACTERISTICS. OFF … |
| File Format / Size | PDF / 469 Kb |
| Document Language | English |
2SD669/A. NPN SILICON TRANSISTOR. ELECTRICAL CHARACTERISTICS. OFF CHARACTERISTICS. ON CHARACTERISTICS. DYNAMIC CHARACTERISTICS
Model Line for this Datasheet
Text Version of Document
2SD669/A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 V Collector to Emitter Breakdown 2SD669 120 V BV Voltage CEO IC=10mA, RBE= 2SD669A 160 V Collector to Emitter Breakdown 2SD669 120 V BV Voltage (V CES IC=1mA, VBE=0V BE=0V) 2SD669A 160 V Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-off Current ICBO VCB=160V, IE=0 10 μA Emitter Cutoff Current IEBO VEB=4V, IC=0 10 μA
ON CHARACTERISTICS
h DC Current Lain FE1 VCE=5V, IC=150mA (Note) 60 320 hFE2 VCE=5V, IC=500mA (Note) 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=600mA, IB=50mA (Note) 1.2 V Base-Emitter Voltage VBE VCE=5V, IC=150mA (Note) 1.5 V
DYNAMIC CHARACTERISTICS
Current Lain Bandwidth Product fT VCE=5V, IC=150mA (Note) 140 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF
SWITCHINL CHARACTERISTICS
Rise time tR VCC=50V, IC=0.5A, 0.5 μs Storage time t IB1=IB2=10mA, tP=25μs, S 1.5 μs Duty Cycle≤1% Fall Time tF 0.7 μs Note: Pulse test.
CLASSIFICATION OF hFE1
RANK B C D RANLE 60-120 100-200 160-320
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
www.unisonic.com.tw
QW-R204-005.W
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector to Base Breakdown Voltage BVCBO IC=1mA, IE=0 180 V Collector to Emitter Breakdown 2SD669 120 V BV Voltage CEO IC=10mA, RBE= 2SD669A 160 V Collector to Emitter Breakdown 2SD669 120 V BV Voltage (V CES IC=1mA, VBE=0V BE=0V) 2SD669A 160 V Emitter to Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-off Current ICBO VCB=160V, IE=0 10 μA Emitter Cutoff Current IEBO VEB=4V, IC=0 10 μA
ON CHARACTERISTICS
h DC Current Lain FE1 VCE=5V, IC=150mA (Note) 60 320 hFE2 VCE=5V, IC=500mA (Note) 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=600mA, IB=50mA (Note) 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=600mA, IB=50mA (Note) 1.2 V Base-Emitter Voltage VBE VCE=5V, IC=150mA (Note) 1.5 V
DYNAMIC CHARACTERISTICS
Current Lain Bandwidth Product fT VCE=5V, IC=150mA (Note) 140 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF
SWITCHINL CHARACTERISTICS
Rise time tR VCC=50V, IC=0.5A, 0.5 μs Storage time t IB1=IB2=10mA, tP=25μs, S 1.5 μs Duty Cycle≤1% Fall Time tF 0.7 μs Note: Pulse test.
CLASSIFICATION OF hFE1
RANK B C D RANLE 60-120 100-200 160-320
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
www.unisonic.com.tw
QW-R204-005.W