Datasheet Si7850DP (Vishay)
| Manufacturer | Vishay |
| Description | N-Channel 60 V (D-S) Fast Switching MOSFET in PowerPAK SO-8 package |
| Pages / Page | 12 / 1 — Si7850DP. N-Channel 60 V (D-S) Fast Switching MOSFET. FEATURES. PowerPAK® … |
| File Format / Size | PDF / 369 Kb |
| Document Language | English |
Si7850DP. N-Channel 60 V (D-S) Fast Switching MOSFET. FEATURES. PowerPAK® SO-8 Single. APPLICATIONS. PRODUCT SUMMARY
Model Line for this Datasheet
Text Version of Document
Si7850DP
www.vishay.com Vishay Siliconix
N-Channel 60 V (D-S) Fast Switching MOSFET FEATURES PowerPAK® SO-8 Single
D • TrenchFET® power MOSFETs D 8 D 7 • New low thermal resistance PowerPAK® D 6 package with low 1.07 mm profile 5 • PWM optimized for fast switching • 100 % Rg tested Available 1 • Material categorization: for definitions of 6.15 mm 2 S compliance please see www.vishay.com/doc?99912 3 S 1 5.15 mm 4 S
APPLICATIONS
G Top View Bottom View • Primary side switch for 24 V DC/DC applications • Secondary synchronous rectifier
PRODUCT SUMMARY
D VDS (V) 60 RDS(on) max. () at VGS = 10 V 0.022 RDS(on) max. () at VGS = 4.5 V 0.031 Q G g typ. (nC) 18 ID (A) 10.3 Configuration Single S N-Channel MOSFET
ORDERING INFORMATION
Package PowerPAK SO-8 Lead (Pb)-free Si7850DP-T1-E3 Lead (Pb)-free and halogen-free Si7850DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s STEADY STATE UNIT
Drain-source voltage VDS 60 60 V Gate-source voltage VGS ± 20 ± 20 TA = 25 °C 10.3 6.2 Continuous drain current (TJ = 150 °C) a ID TA = 85 °C 7.5 4.5 Continuous source current IS 3.7 1.5 A Pulsed drain current IDM 40 40 Avalanche current b IAS 15 15 Single avalanche energy b EAS 11 11 mJ TA = 25 °C 4.5 1.8 Maximum power dissipation a PD W TA = 85 °C 2.3 0.9 Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
t 10 s 22 28 Maximum junction-to-ambient a RthJA Steady state 58 70 °C/W Maximum junction-to-case (drain) Steady state RthJC 2.6 3.3
Notes
a. Surface mounted on 1" x 1" FR4 board b. Guaranteed by design, not subject to production testing S09-0227-Rev. E, 09-Feb-09
1
Document Number: 71625 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
N-Channel 60 V (D-S) Fast Switching MOSFET FEATURES PowerPAK® SO-8 Single
D • TrenchFET® power MOSFETs D 8 D 7 • New low thermal resistance PowerPAK® D 6 package with low 1.07 mm profile 5 • PWM optimized for fast switching • 100 % Rg tested Available 1 • Material categorization: for definitions of 6.15 mm 2 S compliance please see www.vishay.com/doc?99912 3 S 1 5.15 mm 4 S
APPLICATIONS
G Top View Bottom View • Primary side switch for 24 V DC/DC applications • Secondary synchronous rectifier
PRODUCT SUMMARY
D VDS (V) 60 RDS(on) max. () at VGS = 10 V 0.022 RDS(on) max. () at VGS = 4.5 V 0.031 Q G g typ. (nC) 18 ID (A) 10.3 Configuration Single S N-Channel MOSFET
ORDERING INFORMATION
Package PowerPAK SO-8 Lead (Pb)-free Si7850DP-T1-E3 Lead (Pb)-free and halogen-free Si7850DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s STEADY STATE UNIT
Drain-source voltage VDS 60 60 V Gate-source voltage VGS ± 20 ± 20 TA = 25 °C 10.3 6.2 Continuous drain current (TJ = 150 °C) a ID TA = 85 °C 7.5 4.5 Continuous source current IS 3.7 1.5 A Pulsed drain current IDM 40 40 Avalanche current b IAS 15 15 Single avalanche energy b EAS 11 11 mJ TA = 25 °C 4.5 1.8 Maximum power dissipation a PD W TA = 85 °C 2.3 0.9 Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
t 10 s 22 28 Maximum junction-to-ambient a RthJA Steady state 58 70 °C/W Maximum junction-to-case (drain) Steady state RthJC 2.6 3.3
Notes
a. Surface mounted on 1" x 1" FR4 board b. Guaranteed by design, not subject to production testing S09-0227-Rev. E, 09-Feb-09
1
Document Number: 71625 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000