Datasheet IRF5305 - 4
| Description | HEXFET Power MOSFET |
| Pages / Page | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| File Format / Size | PDF / 133 Kb |
| Document Language | English |
Fig 5. Fig 6. Fig 7. Fig 8
Text Version of Document
IRF5305 2 5 0 0 2 0 V = 0V , f = 1 M H z G S I = D -1 6A C = C + C , C S H O R TE D iss g s g d d s ) V = -4 4V D S C = C rs s g d V V = -2 8V ( D S 2 0 0 0 C o ss = C ds + C g d e 16 C g ) is s lta F o p V e ( C oss e 1 5 0 0 1 2 rc u itanc o c a -S p a -to 1 0 0 0 8 te , C C a C rs s 5 0 0 , G GS 4 -V F O R TE S T C IR C U IT S E E F IG U R E 1 3 0 A 0 A 1 1 0 1 0 0 0 1 0 2 0 3 0 4 0 5 0 6 0 -V DS , D rain-to -S o urc e V oltag e (V ) Q , Total G ate C harge (nC ) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 0 1 0 0 0 O P E R A T IO N IN T H IS A R E A L IM ITE D ) B Y R D S (on) t (A n rre ) u C t (A 1 0 0 n in ra rre u D 100 e C rs in 1 0 0 µ s e ra v T = 17 5 °C e J D R 1 0 , D 1 m s T = 25 °C -I J , SD -I 1 0 m s T = 25 °C C T = 17 5°C J V G S = 0 V S ing le P u ls e 1 0 A 1 A 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 1 1 0 1 0 0 - -V , D rain-to-S ourc e V oltage (V ) S V D , S o urc e-to -D ra in V o lta ge (V ) D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 0 1 0 0 0 O P E R A T IO N IN T H IS A R E A L IM ITE D ) B Y R D S (on) t (A n rre ) u C t (A 1 0 0 n in ra rre u D 100 e C rs in 1 0 0 µ s e ra v T = 17 5 °C e J D R 1 0 , D 1 m s T = 25 °C -I J , SD -I 1 0 m s T = 25 °C C T = 17 5°C J V G S = 0 V S ing le P u ls e 1 0 A 1 A 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 1 1 0 1 0 0 - -V , D rain-to-S ourc e V oltage (V ) S V D , S o urc e-to -D ra in V o lta ge (V ) D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
