Datasheets Nexperia - 2
Manufacturer: "Nexperia"
Search results: 100 Output: 21-40
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20 V, 1 A P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1 A very low VF MEGA Schottky barrier rectifiers Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic ...
1 A very low VF MEGA Schottky barrier rectifiers Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic ...
1 A very low VF MEGA Schottky barrier rectifiers Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic ...
Hex unbuffered inverter The 74AHCU04 is high-speed Si-gate CMOS devices and is pin compatible with low power Schottky TTL (LSTTL). It is specified in compliance with JEDEC standard No. 7A.
Hex unbuffered inverter The 74HCU04 is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.
N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 500 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using ...- N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88 Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and ...
P-channel TrenchMOS extremely low level FET
Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed ...- Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been ...
Extremely low clamping low capacitance ESD protection Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra small ...
Extremely low clamping low capacitance ESD protection Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra small ...- Extremely low clamping low capacitance ESD protection Symmetrical bidirectional ElectroStatic Discharge (ESD) protection diode array, part of the TrEOS protection family. This device is housed in a DFN0603-3 (SOT8013) leadless ultra small ...
- Schottky barrier diode Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package.
150 mA LED driver in DFN2020D-6 LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
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