Datasheets ON Semiconductor - 5

Manufacturer: "ON Semiconductor"
Search results: 2,050 Output: 81-100

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  1. N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
  2. Digital Potentiometer (POT), 32-Tap, with Buffered Wiper The CAT5112 is a single digital POT designed as an electronic replacement for mechanical potentiometers. Ideal for automated adjustments on high volume production lines, they are also well ...
  1. NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
  2. NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
  3. NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
  4. NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
  5. NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
  6. NPN Epitaxial Silicon Darlington Transistor The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary ...
  7. Zener Voltage Regulators 200 mW SOD−323 Surface Mount This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are ...
  8. TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...
  9. 50 V Dual Common Cathode Switching Diode The Common Cathode Switching Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT-23 package, which is designed for low power surface mount applications.
  10. 1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...
  11. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  12. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  13. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  14. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  15. Operational Amplifier, Low Voltage The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will swing to ...
  16. Plastic Silicon PIN Photodiode The QSE773 is a silicon PIN photodiode encapsulated in an infrared, transparent, black, plastic sidelooker package.
  17. Switching Transistor MPS3646
  18. Switching Transistors MPS2369

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