Datasheets - - 6

Search results: 94,881 Output: 101-120

View: List / Images

  1. Datasheet Infineon IRGPS60B120KDP
    Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package IGBT NPT 1200 V 105 A 595 W Through Hole SUPER-247 (TO-274AA). Motor Control Co-Pack IGBT. Discontinued product, Obsolete. Replacement: IKQ50N120CT2
  2. Datasheet Vishay SQJA80EP-T1_BE3
    Automotive N-Channel 80 V (D-S) 175 C MOSFET
  1. Datasheet Vishay SI7489DP-T1-E3
    P-Channel 100-V (D-S) MOSFET Halogen-free According to IEC 61249-2-21 Available. TrenchFET Power MOSFET
  2. Datasheet Senba Sensing GL5516
    CdS Photoresistor Photoresistor is a resistor which made of semi-conductor material,and the conductance changes with luminance variation. The photoresistor can be manufactured with different figures and illuminated area based on this ...
  3. 16-channel LED driver w/EEprom dot correction & grayscale PWM control The TLC5940 is a 16-channel, constant-current sink LED driver. Each channel has an individually adjustable 4096-step grayscale PWM brightness control and a 64-step, ...
  4. Datasheet ON Semiconductor FDMA430NZ
    Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
  5. Datasheet Diodes ZLLS350TA
    Schottky Packaged in the SOD523 package this addition to the Zetex Low Leakage Schottky diode range offers an ideal low VF/IR performance combined with a low package height of 0.9mm making the device suitable for various converter, charger, and C ...
  6. Datasheet Diodes DFLS230LH-7
    Schottky
  7. Datasheet Diodes DFLS230LQ-7
    This Schottky barrier rectifier is designed to meet the stringent requirements of automotive applications. It is ideally suited to be used as: polarity protection diodes, recirculating diodes, and switching diodes.
  8. Datasheet Diodes DFLS230-7
    Schottky
  9. Datasheet Diodes DFLS230L-7
    Schottky
  10. Datasheet Diodes PI7C9X762Q2ZHEX
    Automotive I2C-Bus/SPI to UART Bridge Controller with 64 Bytes of TX/RX FIFOs The PI7C9X762Q is a I2C-bus/SPI to a dual-channel high per­formance UART bridge controller. It offers data rates up to 33Mbps and guarantees low operating and sleeping ...
  11. Datasheet Vishay LTA050F5R000JTE3
    50 W Power Resistor Thick Film Technology Features 50 W at 50 C case temperature heatsink mounted Direct mounting ceramic on heatsink Broad resistance range: 0.010 Ω to 450 kΩ
  12. Datasheet Littelfuse LF53464-08TMR
    Omni-polar Magnetic Angle Sensor in LGA8L package LF53464 Omni-polar Magnetic Angle Sensor is High precision magnetic 0 to 360 degree angle measurement sensor in X and Y axis sensing direction with compensation of thermal drift ensuring the high ...
  13. Omni-polar Magnetic Angle Sensor in TSSOP8 package LF53466 Omni-polar Magnetic Angle Sensor is high precision magnetic 0 to 360 degree angle measurement sensor in X and Y axis sensing direction with compensation of thermal drift ensuring the high ...
  14. Datasheet Vishay Si4936DY
    Dual N-Channel 30-V (D-S) MOSFET
  15. Datasheet Nexperia PMV65XP,215
    20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
  16. Datasheet NXP PMV65XP
    20 V, single P-channel Trench MOSFET P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
  17. Datasheet Nexperia PMV65UNEAR
    20 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
  18. Datasheet Nexperia PMV65ENEAR
    40 V, N-channel Trench MOSFET N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.