Datasheet SI4202DY-T1-GE3 - Vishay MOSFET, NN CH, W/D, 30 V, 12.1 A, SO8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NN CH, W/D, 30 V, 12.1 A, SO8

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Docket:
Si4202DY
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.014 at VGS = 10 V 0.017 at VGS = 4.5 V ID (A) 12.1 11 Qg (Typ.) 5.4 nC

Specifications:

• Continuous Drain Current Id: 12.1 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.0115 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 3.7 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

SI4202DYT1GE3, SI4202DY T1 GE3