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Datasheet IPD320N20N3 G - Infineon MOSFET, N-CH, 200 V, 34 A, TO252-3

Infineon IPD320N20N3 G

Part Number: IPD320N20N3 G

Manufacturer: Infineon

Description: MOSFET, N-CH, 200 V, 34 A, TO252-3

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IPD320N20N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID 200 32 34 V mW A
Ideal for high-frequency switching and synchronous rectification Type IPD320N20N3 G


  • Continuous Drain Current Id: 34 A
  • Drain Source Voltage Vds: 200 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.027 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 136 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: N Channel
  • RoHS: Yes

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