Datasheet Texas Instruments CSD19536KTTT
| Manufacturer | Texas Instruments |
| Series | CSD19536KTT |
| Part Number | CSD19536KTTT |
CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET 3-DDPAK/TO-263
Datasheets
CSD19536KTT 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 915 Kb, Revision: B, File published: Aug 16, 2016
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Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Packaging
| Pin | 3 |
| Package Type | KTT |
| Industry STD Term | TO-263 |
| JEDEC Code | R-PSFM-G |
| Package QTY | 50 |
| Carrier | SMALL T&R |
| Device Marking | CSD19536KTT |
| Width (mm) | 8.41 |
| Length (mm) | 10.18 |
| Thickness (mm) | 4.44 |
| Pitch (mm) | 2.54 |
| Max Height (mm) | 4.83 |
| Mechanical Data | Download |
Parametrics
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 272 A |
| ID, package limited | 200 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | D2PAK mm |
| QG Typ | 118 nC |
| QGD Typ | 17 nC |
| Rds(on) Max at VGS=10V | 2.4 mOhms |
| VDS | 100 V |
| VGS | 20 V |
| VGSTH Typ | 2.5 V |
Eco Plan
| RoHS | Compliant |
| Pb Free | Yes |
Model Line
Series: CSD19536KTT (2)
- CSD19536KTT CSD19536KTTT
Manufacturer's Classification
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor