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Documents CSD83325L
SLPS494B – NOVEMBER 2014 – REVISED FEBRUARY 2017 CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Common Drain Configuration
Low-On Resistance
Small Footprint of 2.2 mm Г— 1.15 mm
Lead Free
RoHS Compliant
Halogen Free
Gate ESD Protection TA = 25В°C TYPICAL VALUE
Source-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 8.4 nC Qgd Gate Charge Gate-to-Drain RS1S2(on)
VGS(th) nC
17.5 mΩ Source-to-Source On Resistance VGS = 3.8 V 10.9 mΩ VGS = 4.5 V 9.9 mΩ Threshold Voltage 0.95 V Device Information(1) Battery Management
Battery Protection DEVICE QTY CSD83325L 3000 CSD83325LT 3 Description S2 G1 G2 PACKAGE SHIP 7-Inch Reel 2.20-mm Г— 1.15-mm
Land Grid Array (LGA)
Package Tape
and
Reel Absolute Maximum Ratings
TA = 25В°C Top View …
