Datasheet IRLL2705PBF - International Rectifier MOSFET, N, 55 V, 3.8 A, SOT-223

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, 55 V, 3.8 A, SOT-223

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Docket:
PD- 95338
IRLL2705PbF
Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description
l
HEXFET® Power MOSFET

Simulation Model

Specifications:

• Continuous Drain Current Id: 3.8 A
• Current Id Max: 3.8 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 55 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 60°C/W
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 40 MOhm
• Package / Case: SOT-223
• Power Dissipation Pd: 2.1 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: LL2705
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V

RoHS: Y-Ex

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