Datasheet IRFL014NPBF - International Rectifier MOSFET, N, 55 V, 1.9 A, SOT-223
Part Number: IRFL014NPBF
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, N, 55 V, 1.9 A, SOT-223
Docket:
PD- 92003A
HEXFET® Power MOSFET
l l l l l l
IRFL014N
VDSS = 55V RDS(on) = 0.16
Specifications:
- Avalanche Single Pulse Energy Eas: 48mJ
- Capacitance Ciss Typ: 190 pF
- Charge Qrr @ Tj = 25В°C Typ: 64nC
- Continuous Drain Current Id: 2.7 A
- Current Iar: 1.7 A
- Current Id Max: 1.9 A
- Current Idss Max: 1 µA
- Current Temperature: 25°C
- Drain Source Voltage Vds: 55 V
- External Depth: 7.3 mm
- External Length / Height: 1.7 mm
- External Width: 6.7 mm
- Fall Time tf: 3.3 ns
- Full Power Rating Temperature: 25°C
- Gfs Min: 1.6A/V
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Junction to Case Thermal Resistance A: 120°C/W
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 160 MOhm
- On State Resistance Max: 160 MOhm
- Package / Case: SOT-223
- Power Dissipation Pd: 1 W
- Power Dissipation Ptot Max: 2.1 W
- Power Dissipation on 1 Sq.
PCB: 1 W
- Pulse Current Idm: 15 A
- Rate of Voltage Change dv / dt: 5V/ns
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: SOT-223
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Y-Ex
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