Datasheet IRFP4232PBF - International Rectifier MOSFET, N

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N

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Docket:
PD - 96965A
PDP MOSFET
Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability
IRFP4232PbF
Key Parameters

Simulation Model

Specifications:

• Continuous Drain Current Id: 60 A
• Current Id Max: 60 A
• Drain Source Voltage Vds: 250 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 30 MOhm
• Package / Case: TO-247AC
• Power Dissipation Pd: 430 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-247AC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 250 V
• Voltage Vgs Max: 5 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 245 MI 247 O