Datasheet IRF7809AVPBF - International Rectifier MOSFET, N, SO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, SO-8

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Docket:
PD - 95212A
IRF7809AVPbF
· · · · · N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications · 100% Tested for Rg · Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.
A A D D D

Simulation Model

Specifications:

• Continuous Drain Current Id: 14.5 A
• Current Id Max: 13.3 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 8.5 MOhm
• Package / Case: SOIC
• Pin Configuration: b
• Pin Format: 1 s
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 100 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Row Pitch: 6.3 mm
• SMD Marking: F7809
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

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