Datasheet IRF6614TR1 - International Rectifier MOSFET, N, DIRECTFET, ST

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, ST

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Docket:
PD -96907B
IRF6614
DirectFET Power MOSFET
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Application Specific MOSFETs VDSS VGS RDS(on) RDS(on) Lead and Bromide Free 40V max ±20V max 5.9m@ 10V 7.1m@ 4.5V Low Profile (<0.7 mm) Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V Optimized for High Frequency Switching above 1MHz Ideal for CPU Core and Telecom Synchronous Rectification in DC-DC Converters Optimized for Control FET socket of Sync.

Buck Converter Low Conduction Losses Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC ST

Simulation Model

Specifications:

• Capacitance Ciss Typ: 2560 pF
• Charge Qrr @ Tj = 25В°C Typ: 5.5nC
• Continuous Drain Current Id: 55 A
• Current Id Max: 12.7 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 40 V
• External Depth: 4.85 mm
• External Length / Height: 0.7 mm
• External Width: 3.95 mm
• Full Power Rating Temperature: 25°C
• IC Package (Case style): ST
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• Number of Pins: 7
• Number of Transistors: 1
• On Resistance Rds(on): 8.3 MOhm
• On State Resistance Max: 8.3 MOhm
• Operating Temperature Range: -40°C to +150°C
• Package / Case: ST
• Power Dissipation Pd: 2.1 W
• Pulse Current Idm: 102 A
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Typ: 15 ns
• SMD Marking: 6614
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Case Style: ST
• Transistor Polarity: N Channel
• Voltage Vds Typ: 40 V
• Voltage Vds: 40 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.25 V

RoHS: Yes

Accessories:

• LICEFA - V11-7