Datasheet IRF6603TR1 - International Rectifier MOSFET, N, DIRECTFET, MT

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MT

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Docket:
HEXFET®
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6603
Qg(typ.)

Specifications:

• Capacitance Ciss Typ: 6590 pF
• Charge Qrr @ Tj = 25В°C Typ: 60nC
• Continuous Drain Current Id: 92 A
• Current Id Max: 27 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 6.35 mm
• External Length / Height: 0.7 mm
• External Width: 5.05 mm
• Full Power Rating Temperature: 25°C
• IC Package (Case style): MT
• Junction Temperature Tj Max: 125°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• Number of Pins: 7
• Number of Transistors: 1
• On Resistance Rds(on): 3.4 MOhm
• On State Resistance Max: 3.4 MOhm
• Operating Temperature Range: -40°C to +150°C
• Package / Case: MT
• Power Dissipation Pd: 3.6 W
• Pulse Current Idm: 200 A
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Typ: 45 ns
• SMD Marking: 6603
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1.4 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Panasonic - EYGA121807A