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Datasheet IRF6603TR1 - International Rectifier MOSFET, N, DIRECTFET, MT

International Rectifier IRF6603TR1

Part Number: IRF6603TR1

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MT

data sheetDownload Data Sheet

Docket:
HEXFET«
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6603
Qg(typ.)

Specifications:

  • Capacitance Ciss Typ: 6590 pF
  • Charge Qrr @ Tj = 25┬░C Typ: 60nC
  • Continuous Drain Current Id: 92 A
  • Current Id Max: 27 A
  • Current Temperature: 25░C
  • Drain Source Voltage Vds: 30 V
  • External Depth: 6.35 mm
  • External Length / Height: 0.7 mm
  • External Width: 5.05 mm
  • Full Power Rating Temperature: 25░C
  • IC Package (Case style): MT
  • Junction Temperature Tj Max: 125░C
  • Junction Temperature Tj Min: -40░C
  • Mounting Type: SMD
  • Number of Pins: 7
  • Number of Transistors: 1
  • On Resistance Rds(on): 3.4 MOhm
  • On State Resistance Max: 3.4 MOhm
  • Operating Temperature Range: -40░C to +150░C
  • Package / Case: MT
  • Power Dissipation Pd: 3.6 W
  • Pulse Current Idm: 200 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Typ: 45 ns
  • SMD Marking: 6603
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 2.5 V
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vds: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.5 V
  • Voltage Vgs th Min: 1.4 V

RoHS: Yes

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