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Datasheet LAPIS Semiconductor MR48V256C

ManufacturerLAPIS Semiconductor
SeriesMR48V256C
Part NumberMR48V256C

The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) fabricated in silicon-gate CMOS technology.
As FeRAM cells are nonvolatile, backup batteries to hold data can be eliminated.
And, data can be read and written like SRAM, no erase or block operation is needed.
The device is guaranteed for the write/read tolerance of 1012 cycles per bit and the rewrite count can be extended significantly.

Datasheets

  • Download » Datasheet, PDF, 281 Kb, Revision: 1, 11-13-2013
    MR48V256C datasheet
    Docket ↓
    FEDR48V256C-01
    Issue Date: Nov. 13, 2013 MR48V256C
    32,768-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION
    The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed
    in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are
    nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and
    programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle
    time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.
    The MR48V256C can be used in various applications, because the device is guaranteed for the write/read
    tolerance of 1012 cycles per bit and the rewrite count can be extended significantly. FEATURES 32,768-word  8-bit configuration
    A single 2.7 to 3.6V power supply
    Read access time:
    70 ns (Max.)
    Write enable time:
    70 ns (Min.)
    Random read/write cycle time
    150 ns (Min.)
    Read/write tolerance
    1012 cycles/bit
    Data retention
    10 years
    Guaranteed operating temperature range
    40 to 85C (Extended temperature version) ...

Prices

Packaging

PackageTSOP(Ⅰ)28

Parametrics

Configuration(bank×word×bit)32Kx8
Data Retention10 years
Density(bit)256K
InterfaceParallel
Operating SpeedtRC=150ns
Operating Temperature(°C)-40 to +85
Read/Write Endurance1012 Times
Supply Voltage(v)2.7∼3.6

Manufacturer's Classification

  • Memory
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