Datasheets - FRAM

Subsection: "FRAM"
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  1. Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
  2. Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
  3. Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
  4. Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
  1. Memory FRAM 4M (512K x 8) Bit SPI
  2. Memory FRAM 4M (512K x 8) Bit SPI
  3. Memory FRAM 4M (512K x 8) Bit SPI
  4. Memory FRAM 8M (512K×16) Bit
  5. Memory FRAM 8M (512K×16) Bit
  6. Memory FRAM 64K (8Kx8) Bit SPI
  7. Memory FRAM 64K (8Kx8) Bit SPI
  8. Memory FRAM 64K (8Kx8) Bit SPI
  9. Memory FRAM 64K (8Kx8) Bit SPI
  10. The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) fabricated in silicon-gate CMOS technology. As FeRAM cells are nonvolatile, backup batteries to hold data can be eliminated. And, data can be read and ...
  11. The MR45V100A is a nonvolatile 128K word x 8-bit ferroelectric random access memory (FeRAM) fabricated in silicon-gate CMOS technology
  12. The MR44V100A is a nonvolatile 131,072-word x 8-bit ferroelectric random access memory (FeRAM) fabricated in silicon-gate CMOS technology