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Datasheet Integra Technologies IGT5259L50

ManufacturerIntegra Technologies
SeriesIGT5259L50
Part NumberIGT5259L50

C-Band Radar 50Ω Transistor - GaN

Datasheets

  • Download » Datasheet PDF, 133 Kb, File published: Feb 12, 2018
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    Part Number: Integra IGT5259L50 TECHNOLOGIES, INC. C-Band Radar 50Ω Transistor -GaN
    в–  GaN on SiC HEMT Technology
    в–  POUT-PK = 50W @ 1ms/15%/50V
    в–  5.2-5.9GHz Instantaneous Operating Frequency Range
    ■ 50Ω Internally Impedance Matched Device
    в–  Depletion Mode Device
    в–  Negative Gate Voltage and Bias Sequencing Required
    в–  Metal Based Package Sealed With Ceramic-Epoxy Lid
    в–  Gold Metallization System: Chip -Wire Bond -Package
    ■ Package Size: W=0.800″(20.32mm), L=0.400″(10.16mm)
    ■ 100% High Power RF Tested in 50Ω RF Test Fixture PARAMETER SYM MIN Drain Leakage Current ID-OFF -Gate Threshold Voltage VGS-TH -Input Return Loss IRL -18 Power Gain Gp Drain Efficiency ND TYP MAX UNITS TEST CONDITIONS -1 mA -2.3 -V VDS=50V, ID=100mA, TF1, BD -10 -7 dB POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 13.0 14.0 15.0 dB POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 38 43 60 % POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 DC ELECTRICAL SPECIFICATIONS
    VDS=50V, VGS= -6V, TF1, S1 RF ELECTRICAL SPECIFICATIONS Pulse Amplitude Droop
    Delta Insertion Phase Variation
    Load Mismatch Stability
    Load Mismatch Tolerance DC & RF TEST CONDITIONS
    Output Power 1 D -0.80 -0.40 +0.00 dB POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 d-IP -30 -30 Deg POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 VSWR-S 2:1 --POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 LMT 3:1 --POUT1, V1, IDQ1, PW1, DF1, F1, F2, F3, TF1, S1 SYM MIN NOM MAX UNITS TEST CONDITIONS POUT1 -50 -W -Drain Supply Voltage 1 V1 -50 -V -Quiescent Drain Current 1 IDQ1 -15 -mA -Pulse Width 1 PW1 -1 -ms -Duty Factor 1 DF1 -15 -% -Frequency 1 F1 -5.20 -GHz -Frequency 2 F2 -5.55 -GHz -Frequency 3 F3 -5.90 -GHz -Flange Temperature 1 TF1 25 30 35 В°C -Screening Level 1 S1 -100 -% -IGT5259L50 PRELIMINARY SPECIFICATION
    FILE: IGT5259L50-REV-PR1-DS-REV-NC
    Page 1 of 4 www.integratech.com
    PHONE: 310-606-0855
    FAX: 310-606-0865 INTEGRA TECHNOLOGIES, INC.
    321 CORAL CIRCLE
    EL SEGUNDO, CA 90245-4620 Part Number: Integra IGT5259L50 TECHNOLOGIES, INC. PARAMETER SYM MIN MAX UNITS SCREEN CONDITIONS VDS -60 V BD Gate-Source Voltage VGS -10 0 V BD TF = 25В°C Storage Temperature Range TSTG -55 +150 В°C BD -TJ -55 +200 В°C BD -DC Wafer Probe --100% Per Integra Spec Wafer DC, RF Qualification --Q1 Per Integra Spec Wire Bond Strength --LM Per Integra Spec MAXIMUM RATINGS
    Drain-Source Voltage Operating Junction Temperature TF = 25°C PROCESS SPECIFICATIONS Pre-cap Visual Inspection --100% Per Integra Spec Gross Leak Test – MIL-STD-750D --100% Method 1071.6 C RTH(JC) -TBD °C/W BD Parameter Qualified By Design BD ---Parameter Qualified ...

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