Datasheet Toshiba SSM6N813R

ManufacturerToshiba
SeriesSSM6N813R
Part NumberSSM6N813R

Small-signal MOSFET 2 in 1

Datasheets

Datasheet PDF, 440 Kb, Language: en, File published: Sep, 2018
SSM6N813R Data sheet/English
Docket

Prices

Status

Lifecycle StatusNew Product

Packaging

Manufacture Package CodeTSOP6F

Parametrics

Application ScopePower Management Switches
Assembly basesThailand
Component Product (Q1)SSM6N813R
Component Product (Q2)SSM6N813R
Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=10V]112 mΩ
Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=4.5V]154 mΩ
Gate threshold voltage (Q1/Q2) (Max)2.5 V
GenerationU-MOSⅧ-H
Input capacitance (Q1/Q2) (Typ.)242 pF
Internal ConnectionIndependent
PolarityN-ch×2
Total gate charge (Q1/Q2) (Typ.) [VGS=4.5V]3.6 nC

Eco Plan

RoHSCompliant

Model Line

Manufacturer's Classification

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