Datasheet Motorola MTD20P06HDL

ManufacturerMotorola
SeriesMTD20P06HDL
Part NumberMTD20P06HDL
Datasheet Motorola MTD20P06HDL

P–Channel Enhancement–Mode Silicon Gate

Datasheets

Datasheet MTD20P06HDL
PDF, 318 Kb, Language: en, File uploaded: Dec 3, 2019, Pages: 12
P–Channel Enhancement–Mode Silicon Gate
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Detailed Description

TMOS Power FET Logic Level

This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

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