Datasheet Renesas HIP2210

ManufacturerRenesas
SeriesHIP2210

100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with Tri-Level PWM Input and Adjustable Dead Time

Datasheets

Datasheet HIP2210, HIP2211
PDF, 608 Kb, Language: en, File uploaded: Jul 2, 2020, Pages: 28
100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with Tri-Level PWM Input and Adjustable Dead Time
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Detailed Description

The HIP2210 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver.

The HIP2210 features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

This driver features strong 3A source, 4A sink drivers with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.

The tri-level input of the HIP2210 PWM pin controls the high-side and low-side drivers with a single pin. When the PWM input is at logic high, the high-side bridge FET is turned on and the low-side FET is off. When the input is at logic low, the low-side bridge FET is turned on and the high-side FET is turned off. When the input voltage is in the mid-level state, both the high-side and low-side bridge FETs are turned off. The PWM threshold levels are proportional to an external input reference voltage on the VREF pin, allowing PWM operation across a 2.7V to 5.5V logic range.

The HIP2210 is offered in a 10 Ld 4x4mm TDFN package.

Other Options

HIP2211

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