Renesas Introduces Rugged and High Performance 100V Half-Bridge MOSFET Drivers

Renesas HIP2210 HIP2211

Robust HIP221x Drivers Combine High Speed and High Voltage to Extend Renesas’ 25-Year MOSFET Driver Legacy in Industrial and Consumer Applications

Renesas Electronics introduced the HIP2211 and HIP2210, a new pair of 100 V half-bridge MOSFET drivers. The HIP2211 is a next-generation pin-compatible upgrade to Renesas’ popular ISL2111 bridge driver, while the new HIP2210 offers a tri-level PWM input to simplify power supply and motor drive design. The HIP2211 and HIP2210 are ideal for 48 V telecom power supplies, Class-D audio amplifiers, solar inverters, and UPS inverters. They are also rugged enough to power the demanding 48 V motor drives found in Li-ion battery-powered household and outdoor products, water pumps, and cooling fans.

Renesas - HIP2210, HIP2211

The HIP221x drivers are designed to work reliably under difficult operating conditions, with the high-speed, high-voltage HS pin tolerating up to –10 V continuously and slewing as quickly as 50 V/ns. Comprehensive under-voltage protection works in tandem with the HIP2210’s programmable anti-shoot-through protection to ensure the driven MOSFETs are not damaged due to power supply or other external fault conditions. Renesas’ HIP221x drivers feature strong 3 A source, 4 A sink drivers with very fast 15 ns typical propagation delay and 2 ns typical delay matching, making them the optimal solution for high-frequency switching applications. Both the HIP2210 and HIP2211 are designed to complement Renesas microcontrollers in advanced DC/DC and brushless motor drive systems.

HIP2211 HI/LI Input Bridge Driver Typical Application (left); HIP2210 PWM Input Bridge Driver Typical Application (right)
HIP2211 HI/LI Input Bridge Driver Typical Application (left); HIP2210 PWM Input Bridge Driver Typical Application (right).

Key Features of HIP2211 and HIP2210

  • 115 VDC bootstrap supply maximum voltage (120 V HS absolute maximum) supports 100 V on the half-bridge
  • Wide VDD voltage operating range of 6 V to 18 V (20 V absolute maximum)
  • HS pin tolerates up to –10 V and 50 V/ns slew rates
  • Integrated 0.5 Ω typical bootstrap diode eliminates external discrete diodes
  • VDD and boot UVLO prevent low gate voltage drive to the NFETs
  • Adjustable dead time delay via RDT pin (HIP2210 only) prevents shoot-through conditions, adjustable from 35 ns to 350 ns with a single resistor

Pricing and Availability

The HIP2211 and HIP2210 are available now from Renesas’ worldwide distributors, both priced at $1.30 USD in 1,000-unit quantities. The HIP2211 is supplied in an 8-lead SOIC and a 10-lead 4 mm × 4 mm TDFN package. The HIP2210 is supplied in a 10-lead 4 mm × 4 mm TDFN package.

The HIP2210EVAL1Z Evaluation Board
The HIP2210EVAL1Z Evaluation Board.

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