Datasheet Toshiba TW070J120B

ManufacturerToshiba
SeriesTW070J120B
Part NumberTW070J120B
Datasheet Toshiba TW070J120B

Power SiC MOSFETs

Datasheets

Datasheet TW070J120B
PDF, 518 Kb, Language: en, File published: Aug, 2020, Pages: 10
MOSFETs Silicon Carbide N-Channel MOS
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Prices

Status

Lifecycle StatusActive (Recommended for new designs)

Packaging

Pins3
Manufacture Package CodeTO-3P(N)
MountingThrough Hole
Width×Length×Height15.5×20.0×4.5 mm

Parametrics

Assembly basesJapan
Drain current36 A
Drain-Source on-resistance (Max) [|VGS|=20V]90 mΩ
Drain-Source voltage1200 V
Input capacitance (Typ.)1680 pF
JEITASC-65
PolarityN-ch

Eco Plan

RoHSCompliant

Manufacturer's Classification

  • Semiconductor > MOSFETs
EMS supplier