Datasheet Motorola MTP2N50E

ManufacturerMotorola
SeriesMTP2N50E
Part NumberMTP2N50E

TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate - TMOS Power FET 2.0 Amperes 500 Volts RDS(on) = 3.6 Ohm - Case 221A–06, Style 5, TO–220AB

Datasheets

Datasheet MTP2N50E
PDF, 253 Kb, Language: en, File uploaded: Feb 12, 2021, Pages: 8
TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate - TMOS Power FET 2.0 Amperes 500 Volts RDS(on) = 3.6 Ohm - Case 221A–06, Style 5 TO–220AB
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Prices

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5pcs MTP2N50E TO-2201,90 $

Detailed Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time.

In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.

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