Datasheet STMicroelectronics MASTERGAN4TR
| Manufacturer | STMicroelectronics |
| Series | MASTERGAN4 |
| Part Number | MASTERGAN4TR |
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
Datasheets
Datasheet MASTERGAN4
PDF, 480 Kb, Language: en, File uploaded: Apr 15, 2021, Pages: 27
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
Extract from the document
Detailed Description
All features- 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 225 mΩ
- IDS(MAX) = 6.5 A
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shut down functionality
Status
| Lifecycle Status | Active (Recommended for new designs) |
Packaging
| Package | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
Model Line
Series: MASTERGAN4 (2)
- MASTERGAN4 MASTERGAN4TR
Manufacturer's Classification
- Power Management > Gate Drivers > High Voltage Half Bridge Gate Drivers