Datasheet STMicroelectronics MASTERGAN4

ManufacturerSTMicroelectronics
SeriesMASTERGAN4

High power density 600V half-bridge driver with two enhancement mode GaN HEMT

Datasheets

Datasheet MasterGaN4
PDF, 480 Kb, Language: en, File uploaded: Apr 15, 2021, Pages: 27
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
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Detailed Description

All features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 225 mΩ
    • IDS(MAX) = 6.5 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shut down functionality

Status

MASTERGAN4MASTERGAN4TR
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)

Packaging

MASTERGAN4MASTERGAN4TR
PackageVFQFPN 9X9X1.0 31L PITCH 0.6MMVFQFPN 9X9X1.0 31L PITCH 0.6MM

Model Line

Series: MASTERGAN4 (2)

Manufacturer's Classification

  • Power Management > Gate Drivers > High Voltage Half Bridge Gate Drivers

1-4 Layer PCBs $2

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