2N3819
N-Channel RF Amplifier
• This device is designed for RF amplifier and mixer applications
operating up to 450MHz, and for analog switching requiring low
capacitance.
• Sourced from process 50.
TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
VDG Drain-Gate Voltage Parameter Ratings
25 Units
V VGS Gate-Source Voltage -25 V ID Drain Current 50 mA IGF Forward Gate Current 10 mA TSTG Storage Temperature Range -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Off Characteristics Parameter Test Condition Min. Typ. Max. Units 2.0 nA V(BR)GSS Gate-Source Breakdwon Voltage IG = 1.0µA, VDS = 0 IGSS Gate Reverse Current VGS = -15V, VDS = 0 25 V VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 2.0nA 8.0 V VGS Gate-Source Voltage VDS = 15V, ID = 200µA -0.5 -7.5 V VDS = 15V, VGS = 0 2.0 20 mA 2000 6500 µmhos 50 µmhos On Characteristics
IDSS Zero-Gate Voltage Drain Current Small Signal Characteristics
gfs Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0KHz goss Output Conductance VDS= 15V, VGS = 0, f = 1.0KHz µmhos yfs Forward Transfer Admittance VDS= 15V, VGS = 0, f = 1.0KHz Ciss Input Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 1600
8.0 pF Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1.0KHz 4.0 pF Thermal Characteristics TA=25°C unless otherwise noted
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PD Parameter
Total Device Dissipation
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