Datasheet Analog Devices ADG636

ManufacturerAnalog Devices
SeriesADG636

1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

Datasheets

Datasheet ADG636
PDF, 505 Kb, Language: en, Revision: B, File uploaded: Apr 24, 2022, Pages: 16
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
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Prices

Status

ADG636YRUZADG636YRUZ-REELADG636YRUZ-REEL7
Lifecycle StatusProduction (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)

Packaging

ADG636YRUZADG636YRUZ-REELADG636YRUZ-REEL7
Package14-Lead TSSOP14-Lead TSSOP14-Lead TSSOP
Pins141414
Package CodeRU-14RU-14RU-14

Parametrics

Parameters / ModelsADG636YRUZADG636YRUZ-REELADG636YRUZ-REEL7
BW -3 dB typ, Hz610M610M610M
Charge Injection, C-1.2p-1.2p-1.2p
Device Config(2:1) x 2(2:1) x 2(2:1) x 2
InterfaceParallelParallelParallel
Leakage Switch ON typ, A10p10p10p
Operating Temperature Range, °C-40 to 125-40 to 125-40 to 125
Package14-Lead TSSOP14-Lead TSSOP14-Lead TSSOP
Switch Ron typ, Ohms858585
Vs Span Dual max, V111111
Vs Span Dual min, V5.45.45.4

Eco Plan

ADG636YRUZADG636YRUZ-REELADG636YRUZ-REEL7
RoHSCompliantCompliantCompliant

Model Line

Manufacturer's Classification

  • Switches and Multiplexers > Dual-Supply Analog Switches and Multiplexers | Single-Supply Analog Switches and Multiplexers

1-4 Layer PCBs $2