Datasheet ADG636 (Analog Devices)

ManufacturerAnalog Devices
Description1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Pages / Page16 / 1 — 1 pC Charge Injection, 100 pA Leakage,. CMOS, ±5 V/+5 V/+3 V Dual SPDT …
RevisionB
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Document LanguageEnglish

1 pC Charge Injection, 100 pA Leakage,. CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch. ADG636. FEATURES. FUNCTIONAL BLOCK DIAGRAM

Datasheet ADG636 Analog Devices, Revision: B

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1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch ADG636 FEATURES FUNCTIONAL BLOCK DIAGRAM 1 pC charge injection ADG636 ±2.7 V to ±5.5 V dual supply S1A 4 6 D1 +2.7 V to +5.5 V single supply S1B 5 Automotive temperature range: −40°C to +125°C 100 pA (maximum at 25°C) leakage currents S2A 11 9 D2 85 Ω typical on resistance S2B 10 Rail-to-rail operation Fast switching times LOGIC Typical power consumption (<0.1 μW) TTL-/CMOS-compatible inputs
01
1 14 2
0 4-
14-lead TSSOP package A0 A1 EN
75 02
APPLICATIONS
Figure 1.
Automatic test equipment Data acquisition systems Battery-powered instruments Communication systems Sample-and-hold systems Remote-powered equipment Audio and video signal routing Relay replacement Avionics GENERAL DESCRIPTION PRODUCT HIGHLIGHTS
The ADG636 is a monolithic device, comprising two indepen- 1. Ultralow charge injection. QINJ: ±1.5 pC typical over the dently selectable CMOS single pole, double throw (SPDT) full signal range. switches. When on, each switch conducts equally well in both 2. Leakage current <0.25 nA maximum at 85°C. directions. 3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply. The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or 4. Automotive temperature range: −40°C to +125°C. from a single supply of +2.7 V to +5.5 V. 5. Small 14-lead TSSOP package. This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 www.analog.com Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 ©2002–2009 Analog Devices, Inc. All rights reserved.
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE
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