Datasheet ZVN3310A - Diodes MOSFET, N, E-LINE

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, E-LINE

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Docket:
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 ­ MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 10
ZVN3310A
D G
S

Simulation Model

Specifications:

• Continuous Drain Current Id: 200 mA
• Current Id Max: 200 mA
• Current Temperature: 25°C
• Device Marking: ZVN3310A
• Drain Source Voltage Vds: 100 V
• Full Power Rating Temperature: 25°C
• Lead Spacing: 1.27 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 10 Ohm
• Package / Case: E-Line
• Power Dissipation Pd: 625 mW
• Power Dissipation Ptot Max: 625 mW
• Pulse Current Idm: 2 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.4 V
• Transistor Case Style: E-Line
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 2.4 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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