Datasheet ZVN3310F - Diodes MOSFET, N, SOT-23

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, SOT-23

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Docket:
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 ­ OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)= 10 7
ZVN3310F
S
D G

Simulation Model

Specifications:

• Continuous Drain Current Id: 100 mA
• Current Id Max: 100 mA
• Current Temperature: 25°C
• Device Marking: ZVN3310F
• Drain Source Voltage Vds: 100 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 10 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 330 mW
• Power Dissipation Ptot Max: 330 mW
• Pulse Current Idm: 2 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: MF
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 2.4 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 2.4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.4 V

RoHS: Yes