Part Number: FDC6301N
Description: MOSFET, NN CH, 25 V, 0.22 A, SSOT6
FDC6301N Dual N-Channel , Digital FET
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.