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Datasheet FDC6301N - Fairchild MOSFET, NN CH, 25 V, 0.22 A, SSOT6

Fairchild FDC6301N

Part Number: FDC6301N

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, NN CH, 25 V, 0.22 A, SSOT6

data sheetDownload Data Sheet

Docket:
September 2001
FDC6301N Dual N-Channel , Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Features

Specifications:

  • Continuous Drain Current Id: 220 mA
  • Current Id Max: 220 mA
  • Drain Source Voltage Vds: 25 V
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on): 5 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SSOT
  • Power Dissipation: 900 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 850 mV
  • Transistor Case Style: SSOT
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 25 V
  • Voltage Vgs Max: 850 mV
  • Voltage Vgs Rds on Measurement: 2.7 V

RoHS: Yes

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