Datasheet FDG6303N - Fairchild MOSFET, NN

Fairchild FDG6303N

Part Number: FDG6303N

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, NN

Docket:
September 2001
FDG6303N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features

Specifications:

Continuous Drain Current Id: 500 mA
Current Id Max: 500 mA
Drain Source Voltage Vds: 25 V
Mounting Type: SMD
Number of Pins: 6
On Resistance Rds(on): 340 MOhm
Package / Case: SC-70
Power Dissipation: 300 mW
Rds(on) Test Voltage Vgs: 4.5 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 800 mV
Transistor Case Style: SC-70
Transistor Polarity: N Channel
Voltage Vds Typ: 25 V
Voltage Vgs Max: 800 mV
Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes