Datasheet FDV304P - Fairchild MOSFET, P, DIGITAL, SOT-23
Part Number: FDV304P
Detailed Description
Manufacturer: Fairchild
Description: MOSFET, P, DIGITAL, SOT-23
Docket:
August 1997
FDV304P Digital FET, P-Channel
General Description
This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Features
Specifications:
- Continuous Drain Current Id: 460 mA
- Current Id Max: 460 mA
- Current Temperature: 25°C
- Drain Source Voltage Vds: 25 V
- ESD HBM: 6 kV
- External Depth: 2.5 mm
- External Length / Height: 1.12 mm
- External Width: 3.05 mm
- Full Power Rating Temperature: 25°C
- Mounting Type: SMD
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 1.5 Ohm
- Package / Case: SOT-23
- Power Dissipation Pd: 350 mW
- Pulse Current Idm: 500 mA
- Rds(on) Test Voltage Vgs: 2.7 V
- SMD Marking: 304P
- SVHC: No SVHC (15-Dec-2010)
- Tape Width: 8 mm
- Threshold Voltage Vgs Typ: -860 mV
- Transistor Case Style: SOT-23
- Transistor Polarity: P Channel
- Voltage Vds Typ: -25 V
- Voltage Vgs Max: -860 mV
- Voltage Vgs Rds on Measurement: -4.5 V
- Voltage Vgs th Max: -1.5 V
RoHS: Yes
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