Datasheet NDP6060 - Fairchild MOSFET, N, TO-220
Part Number: NDP6060
Detailed Description
Manufacturer: Fairchild
Description: MOSFET, N, TO-220
Docket:
March 1996
NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
Specifications:
- Continuous Drain Current Id: 48 A
- Current Id Max: 48 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 60 V
- Full Power Rating Temperature: 25°C
- Lead Spacing: 2.54 mm
- Mounting Type: Through Hole
- Number of Pins: 3
- Number of Transistors: 1
- On Resistance Rds(on): 25 MOhm
- Package / Case: TO-220AB
- Pin Format: 1 g
- Power Dissipation Pd: 100 W
- Power Dissipation Ptot Max: 100 W
- Pulse Current Idm: 144 A
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 2.9 V
- Transistor Case Style: TO-220AB
- Transistor Polarity: N Channel
- Voltage Vds Typ: 60 V
- Voltage Vds: 60 V
- Voltage Vgs Max: 2.9 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Fischer Elektronik - SK 145/37,5 STS-220
- Fischer Elektronik - SK 409/25,4 STS
- Fischer Elektronik - SK 409/50,8 STS
- Fischer Elektronik - WLK 5