Datasheet RFD14N05L - Fairchild MOSFET, N, LOGIC, I-PAK

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, N, LOGIC, I-PAK

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Docket:
RFD14N05L, RFD14N05LSM
Data Sheet May 2010
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
These are N-channel power MOSFETs manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
Features

Specifications:

• Alternate Case Style: I-PAK
• Continuous Drain Current Id: 14 A
• Current Id Max: 14 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 50 V
• Full Power Rating Temperature: 25°C
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: IPAK
• Power Dissipation Pd: 48 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 50 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 5 V
• Voltage Vgs th Max: 2 V

RoHS: Y-Ex

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