Datasheet BSZ050N03MS G - Infineon MOSFET, N CH, 40 A, 30 V, PG-TSDSON-8

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N CH, 40 A, 30 V, PG-TSDSON-8

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Docket:
BSZ050N03MS G
!"#$%!&TM3 M-Series Power-MOSFET
Features · Optimized for 5V driver application (Notebook, VGA, POL) · Low FOMSW for High Frequency SMPS · 100% avalanche tested · N-channel · Very low on-resistance R DS(on) @ V GS=4.5 V · Excellent gate charge x R DS(on) product (FOM) · Qualified according to JEDEC1) for target applications · Superior thermal resistance · Pb-free plating; RoHS compliant · Halogen-free according to IEC61249-2-21 Type BSZ050N03MS G Package PG-TSDSON-8 Marking 050N03M
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 4.5 5.7 40 PG-TSDSON-8 A V mW
Maximum ratings, at T j=25 ° unless otherwise specified C, Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 ° C V GS=10 V, T C=100 ° C V GS=4.5 V, T C=25 ° C V GS=4.5 V, T C=100 ° C V GS=4.5 V, T A=25 ° C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse Gate source voltage

Specifications:

• Current Id Max: 40 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 3.8 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 48 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PG-TSDSON
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes