Datasheet IPB025N08N3 G - Infineon MOSFET, N CH, 120 A, 80 V, PG-TO263-3
Part Number: IPB025N08N3 G
Detailed Description
Manufacturer: Infineon
Description: MOSFET, N CH, 120 A, 80 V, PG-TO263-3
Docket:
IPB025N08N3 G
"%&$!"# 3 Power-Transistor
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TM
Specifications:
- Current Id Max: 120 A
- Drain Source Voltage Vds: 80 V
- Number of Pins: 3
- On Resistance Rds(on): 2 MOhm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 300 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-263
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vgs Max: 20 V
RoHS: Yes