Datasheet IPB081N06L3 G - Infineon MOSFET, N CH, 50 A, 60 V, PG-TO263-3

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N CH, 50 A, 60 V, PG-TO263-3

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Docket:
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IPB081N06L3 G IPP084N06L3 G
"%&$!"# 3 Power-Transistor
Features R #562 =@C 7 9:89 76BF6? 4J D 49:? 8 2 ? 5 D 4
C C H:E J? 64

Specifications:

• Current Id Max: 50 A
• Drain Source Voltage Vds: 60 V
• Number of Pins: 3
• On Resistance Rds(on): 6.7 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 79 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes