Datasheet IPD49CN10N G - Infineon MOSFET, N CH, 53 A, 30 V, PG-TO252-3

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N CH, 53 A, 30 V, PG-TO252-3

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Docket:
IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G
OptiMOS®2 Power-Transistor
Product Summary Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target application · Ideal for high-frequency switching and synchronous rectification Type IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G V DS R DS(on),max (TO252) ID 100 49 20 V m A
Package Marking
PG-TO263-3 50CN10N

Specifications:

• Current Id Max: 20 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 3
• On Resistance Rds(on): 37 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 44 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vgs Max: 20 V

RoHS: Yes