Datasheet SPP24N60CFD - Infineon MOSFET, N-CH, 650 V, 21.7 A, TO-220

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N-CH, 650 V, 21.7 A, TO-220

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Docket:
SPP24N60CFD
CoolMOSTM Power Transistor
Features · Intrinsic fast-recovery body diode · Extremely low reverse recovery charge · Ultra low gate charge · Extreme dv /dt rated · High peak current capability · Qualified according to JEDEC1) for target applications
Product Summary V DS @ Tjmax R DS(on),max ID 650 V
0.185 21.7 PG-TO220 A

Specifications:

• Continuous Drain Current Id: 21.7 A
• Drain Source Voltage Vds: 650 V
• Number of Pins: 3
• On Resistance Rds(on): 0.15 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 240 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 650 V
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)